Character of quantum interference on superconducting circuits made of V3Si

The characteristics of circuits formed by two parallel superconducting bridge-type contacts made of V3Si are studied. The bridges made of V3Si films having the 1-30 μm width and 1-2 μm length and the circuits of different areas have been located in a magnetic field perpendicular to the film plane. Current oscillations through the circuit during magnetic field variations have shown themselves through periodic changes in output voltage of the circuit. The attained value of the voltage oscillation amplitude on the parallel bridge-type contacts is 60 μV. For the first time the periodic voltage oscillations are obtained using such circuits during variations of the external magnetic field. The oscillation period is defined by the quantum of magnetic flux. Perspectiveness of V3Si for construction of superconducting quantum interference devices is shown