Calculations of optical properties in p-doped nitrides quaternary alloys multiple quantum wells

We present theoretical photoluminescence (PL) and absorption spectra of p-doped InGaN/AlInGaN and AlInGaN/InGaN multiple quantum wells (MQWs). The calculations were performed within the k.p method by means of solving a full eight-band Kane Hamiltonian together with the Poisson equation in a plane wave representation, including exchange-correlation effects within the local density approximation. Strain effects due to the lattice mismatch and an internal electric field are also taken into account. We show that by changing the In and Al composition we can reach short and long emission wavelengths. The trends in the calculated Stokes shift, due to many-body effects within the quasi-two-dimensional hole gas (2DHG), are analyzed as a function of the acceptor doping concentration. Since the studies of optical properties of quantum wells based on nitrides quaternary alloys are at an early stage, the results reported here will provide guidelines for the interpretation of forthcoming experiments