Published September 1, 2018
| Version v1
Journal article
Tunneling magnetoresistance effect in ferromagnet-quantum dot-ferromagnet system
Creators
- 1. Department of Fundamental Courses, Army Academy of Armored Forces, Beijing, 100072 (China)
Description
We study the tunneling magnetoresistance(TMR) effect in Ferromagnet-quantum dot-Ferromagnet (FM-QD-FM) system by nonequilibrium Green's functions (NGF) method. From the study of TMR-eV curves, we find that the linewidth function has huge influence on the tunneling magnetoresistance effect. The tunneling magnetoresistance effect is also influenced by the relative angle of magnetic moment in the ferromagnetic leads in the quantum dot system. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/1074/1/012118Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 1074
- Journal Issue
- 1
- Journal Page Range
- [9 p.]
- ISSN
- 1742-6596
Conference
- Title
- International Conference on Mechanical, Electric and Industrial Engineering
- Acronym
- MEIE2018
- Dates
- 26-28 May 2018
- Place
- Hangzhou (China)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53016504
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- LINE WIDTHS; MAGNETIC MOMENTS; MAGNETORESISTANCE; QUANTUM DOTS; TUNNEL EFFECT
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; NANOSTRUCTURES; PHYSICAL PROPERTIES