Published September 1, 2018 | Version v1
Journal article

Tunneling magnetoresistance effect in ferromagnet-quantum dot-ferromagnet system

Creators

  • 1. Department of Fundamental Courses, Army Academy of Armored Forces, Beijing, 100072 (China)

Description

We study the tunneling magnetoresistance(TMR) effect in Ferromagnet-quantum dot-Ferromagnet (FM-QD-FM) system by nonequilibrium Green's functions (NGF) method. From the study of TMR-eV curves, we find that the linewidth function has huge influence on the tunneling magnetoresistance effect. The tunneling magnetoresistance effect is also influenced by the relative angle of magnetic moment in the ferromagnetic leads in the quantum dot system. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-6596/1074/1/012118

Additional details

Publishing Information

Journal Title
Journal of Physics. Conference Series (Online)
Journal Volume
1074
Journal Issue
1
Journal Page Range
[9 p.]
ISSN
1742-6596

Conference

Title
International Conference on Mechanical, Electric and Industrial Engineering
Acronym
MEIE2018
Dates
26-28 May 2018
Place
Hangzhou (China)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
53016504
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Resource subtype / Literary indicator
Conference
Descriptors DEI
LINE WIDTHS; MAGNETIC MOMENTS; MAGNETORESISTANCE; QUANTUM DOTS; TUNNEL EFFECT
Descriptors DEC
ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; NANOSTRUCTURES; PHYSICAL PROPERTIES