Published March 2007 | Version v1
Journal article

Pressure effect on transport property of YbMn2Ge2

  • 1. Graduate School of Science and Engineering, Saitama University, Saitama, Saitama 338-8570 (Japan) and Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8570 (Japan)
  • 2. Graduate School of Science and Engineering, Yamaguchi University, Yamaguchi, Yamaguchi 753-8512 (Japan)
  • 3. Institute for Solid State Physics, University of Tokyo, Kashiwa, Chiba 277-8570 (Japan)
  • 4. Graduate School of Science and Engineering, Saitama University, Saitama, Saitama 338-8570 (Japan)

Description

Electrical resistivities of YbMn2Ge2 were measured at several pressures in a temperature range from 2K to room temperature. In low temperature region below 100K, temperature dependence of the resistivity shows significant change between 2.0 and 4.0GPa. Under 4.0GPa, anomalies of the resistivity were observed at (Tt3∼) 21.6K and (Tt4∼) 7.1K. There is a fair possible that they originated from novel magnetic phase transitions of Yb or Mn sublattice. With increasing pressure, Tt4 increases linearly. In contrast to the pressure dependence of Tt4, Tt3 decreases linearly

Additional details

Identifiers

DOI
10.1016/j.jmmm.2006.10.674;
PII
S0304-8853(06)01899-3;

Publishing Information

Journal Title
Journal of Magnetism and Magnetic Materials
Journal Volume
310
Journal Issue
2
Journal Page Range
p. 1877-1878
ISSN
0304-8853
CODEN
JMMMDC

Conference

Title
17. international conference on magnetism
Dates
20-25 Aug 2006
Place
Kyoto (Japan)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.