Published May 31, 2007 | Version v1
Journal article

DC and high-frequency conductivity of CuInSe2 bulk crystals

  • 1. Laboratoire des surfaces et interfaces (LESIMS), Universite d'Annaba (Algeria)
  • 2. ENSICAEN/ SIFCOM, UMR CNRS 6176, Universite, 6-Boulevard du Marechal Juin 14050, Caen (France)
  • 3. Centre de Microanalyse Nucleaire, UFR Science and Techniques, 16 route de Gray, 25030, Besancon (France)

Description

Bulk crystals of CuInSe2 (CIS) were grown by vacuum fusion technique with specific proportions of Cu, In and Se. The studied samples, cut from the central part of the ingots, were first characterised by scanning electron microscopy, X-ray diffraction and energy dispersive spectroscopy. The conductivity of the crystals was investigated by using a contactless technique based on hyper-frequency microwave. The method consisted in measurements made in a rectangular resonance cavity at 9192 MHz. Conductivity has been also measured by conventional Van der Paw method and the values obtained, varied in the range [3.10-3-7.10-3]Ω-1cm-1, didn't show significant discrepancies between the two techniques

Additional details

Identifiers

DOI
10.1016/j.tsf.2006.12.111;
PII
S0040-6090(06)01665-8;

Publishing Information

Journal Title
Thin Solid Films
Journal Volume
515
Journal Issue
15
Journal Page Range
p. 6226-6228
ISSN
0040-6090
CODEN
THSFAP

Conference

Title
EMRS 2006 Symposium O on thin film chalcogenide photovoltaic materials
Dates
29 May - 2 Jun 2006
Place
Nice (France)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.