Published October 1981
| Version v1
Journal article
Influence of electron irradiation on heating of carriers by an electric field applied to Ge/sub 1-x/Si/sub x/ single crystals
- 1. Radiation Research Section, Presidium of the Academy of Sciences of the Azerbaidzhan SSR, Baku
Description
An experimental investigation was made of the influence of irradiation with 4-MeV electrons on the process of carrier heating by a strong microwave electric field applied to p- and n-type Ge/sub 1-x/Si/sub x/ (x = 0.05 and 0.15) crystals kept at temperatures 77--300 0K. It was found that the electrical properties of these crystals determined in high or low fields were influenced by electron irradiation. A qualitative explanation of the results obtained is proposed
Additional details
Publishing Information
- Journal Title
- Sov. Phys. - Semicond. (Engl. Transl.)
- Journal Volume
- 15
- Journal Issue
- 10
- Series
- Sov. Phys. - Semicond. (Engl. Transl.).
- Journal Page Range
- 1155-1157
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14745537
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ELECTRICAL PROPERTIES; ELECTRONS; GERMANIUM BASE ALLOYS; LOW TEMPERATURE; MEDIUM TEMPERATURE; MEV RANGE 01-10; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SILICON ALLOYS; SOLID SOLUTIONS
- Descriptors DEC
- ALLOYS; CRYSTALS; DISPERSIONS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; GERMANIUM ALLOYS; HOMOGENEOUS MIXTURES; LEPTONS; MEV RANGE; MIXTURES; PHYSICAL PROPERTIES; RADIATION EFFECTS; SOLUTIONS