Published December 4, 2013
| Version v1
Journal article
Band structure properties of (BGa)P semiconductors for lattice matched integration on (001) silicon
Creators
- 1. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
- 2. Advanced Technology Institute and Department of Physics, University of Surrey, Guildford, Surrey GU2 7XH, UK and Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, Johor Bahru 81310 (Malaysia)
- 3. Material Sciences Center and Faculty of Physics, Philipps-University, 35032 Marburg (Germany)
- 4. NAsP III/V GmbH, Am Knechtacker 19, 35041 Marburg (Germany)
Description
We report the band structure properties of (BGa)P layers grown on silicon substrate using metal-organic vapour-phase epitaxy. Using surface photo-voltage spectroscopy we find that both the direct and indirect band gaps of (BGa)P alloys (strained and unstrained) decrease with Boron content. Our experimental results suggest that the band gap of (BGa)P layers up to 6% Boron is large and suitable to be used as cladding and contact layers in GaP-based quantum well heterostructures on silicon substrates
Additional details
Identifiers
- DOI
- 10.1063/1.4848278;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1566
- Journal Issue
- 1
- Journal Page Range
- p. 47-48
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 31. international conference on the physics of semiconductors
- Acronym
- ICPS 2012
- Dates
- 29 Jul - 3 Aug 2012
- Place
- Zurich (Switzerland)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45083122
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALLOYS; BORON; ELECTRIC POTENTIAL; GALLIUM PHOSPHIDES; LAYERS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SILICON; SPECTROSCOPY; SUBSTRATES; VAPOR PHASE EPITAXY
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SEMIMETALS
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC