Development of the microstrip gas chamber for high rate environment

Microstrip gas chambers with passivated interelectrode space and small anode pitch (down to 65 μm) has been fabricated on silicon wafers. Oxide-Nitride layers were applied, which enables to use high field strength at an insulation layer 2.5 μm thick without breakdown up to 900 V. The chamber characteristics have been measured. Passivated microstrip gas chamber with 65 μm anode pitch and anode- cathode distance 20 μm is working in a stable regime with low charging-up effects and gas gain up to 5 x 103. Thin layers of phosphor-silicate glass with resistivity of 1012 - 1013 ω□ were produced. Test exhibits its good long-term stability. (authors)