Terahertz time domain interferometry of a SIS tunnel junction and a quantum point contact
- 1. Lawrence Berkeley Lab., CA (United States). Materials Sciences Div.
- 2. Univ. of California, Berkeley, CA (United States). Dept. of Physics
Description
The author has applied the Terahertz Time Domain Interferometric (THz-TDI) technique to probe the ultrafast dynamic response of a Superconducting-Insulating-Superconducting (SIS) tunnel junction and a Quantum Point Contact (QPC). The THz-TDI technique involves monitoring changes in the dc current induced by interfering two picosecond electrical pulses on the junction as a function of time delay between them. Measurements of the response of the Nb/AlOx/Nb SIS tunnel junction from 75--200 GHz are in full agreement with the linear theory for photon-assisted tunneling. Likewise, measurements of the induced current in a QPC as a function of source-drain voltage, gate voltage, frequency, and magnetic field also show strong evidence for photon-assisted transport. These experiments together demonstrate the general applicability of the THz-TDI technique to the characterization of the dynamic response of any micron or nanometer scale device that exhibits a non-linear I-V characteristic. 133 refs., 49 figs
Availability note (English)
MF available from INIS under the Report Number; Also available from OSTI as DE96005810; NTIS; US Govt. Printing Office Dep.Files
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Additional details
Publishing Information
- Imprint Pagination
- 202 p.
- Report number
- LBL--37935
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 27050031
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Thesis
- Descriptors DEI
- ALUMINIUM OXIDES; DIAGNOSTIC TECHNIQUES; ELECTRIC CONTACTS; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; HETEROJUNCTIONS; INTERFEROMETRY; NIOBIUM; RESPONSE FUNCTIONS; SUPERCONDUCTING JUNCTIONS; TUNNEL EFFECT
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CHALCOGENIDES; CURRENTS; ELECTRICAL EQUIPMENT; ELEMENTS; EQUIPMENT; FUNCTIONS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; TRANSITION ELEMENTS
Optional Information
- Contract/Grant/Project number
- Contract AC03-76SF00098
- Funding organization
- USDOE, Washington, DC (United States).