Published April 14, 2014 | Version v1
Journal article

Spatial density profile of electrons near the LaAlO3/SrTiO3 heterointerface revealed by time-resolved photoluminescence spectroscopy

  • 1. Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
  • 2. Department of Advanced Materials Science, The University of Tokyo, Kashiwa, Chiba 277-8561 (Japan)
  • 3. SLAC National Accelerator Laboratory, Stanford Institute for Materials and Energy Sciences, Menlo Park, California 94025 (United States)
  • 4. Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305 (United States)

Description

The depth profile of the electron density near the LaAlO3/SrTiO3 heterointerface has been studied by means of time-resolved photoluminescence (PL) spectroscopy. A broad blue PL band is observed at 2.9 eV, originating from the two-carrier radiative recombination of interface-induced electrons and photoexcited holes. The PL lifetime of LaAlO3/SrTiO3 heterointerface is dominated by the three-carrier Auger recombination of electrons and holes and is sensitive to electron density. We tuned the probing depth by changing the excitation photon energy and evaluated the carrier-density profile using the relation between the carrier density and the PL lifetime. Our non-contact probe method based on PL spectroscopy indicates that the carriers are confined within several nanometers in depth near the LaAlO3/SrTiO3 heterostructures

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
104
Journal Issue
15
Journal Page Range
p. 151907-151907.4
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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