Optical, electrochemical and electrical properties of p-N,N-dimethyl-amino-benzylidene-malononitrile thin films
- 1. Equipe Dispositifs Electroniques Organiques et Photovoltaïque Moléculaire, Laboratoire de la Matière Condensée et des Nanosciences, Faculté des Sciences de Monastir, Université de Monastir, Avenue de l'Environnement, 5019, Monastir (Tunisia)
Description
A donor-acceptor small organic molecule, p-N,N-dimethyl-amino-benzylidene-malononitrile (DABMN), has been synthesized and successfully prepared in thin films using spin coating technique. The thin film of DABMN exhibited semiconductor behavior with an optical band gap of about 2.27 eV. The photoluminescence spectrum was exhibited a strong red emission. The energy levels of lowest unoccupied molecular orbital (LUMO) and highest occupied molecular orbital (HOMO) were determined by experimental calculation from cyclic voltammetry. The electrical performance of the ITO/DABMN/Al structure device was evaluated through current-voltage characteristics and showed a typical Schottky diode behavior with good charge mobility. The charge density associated with the DABMN film was calculated from the capacitance-voltage measurements. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/2053-1591/ab7dfbAdditional details
Identifiers
Publishing Information
- Journal Title
- Materials Research Express (Online)
- Journal Volume
- 7
- Journal Issue
- 4
- Journal Page Range
- [7 p.]
- ISSN
- 2053-1591
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 52107167
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CAPACITANCE; CHARGE DENSITY; ELECTRIC POTENTIAL; ELECTROCHEMISTRY; ENERGY LEVELS; MOBILITY; MOLECULAR ORBITAL METHOD; PERFORMANCE; PHOTOLUMINESCENCE; SCHOTTKY BARRIER DIODES; SPECTRA; THIN FILMS; VOLTAMETRY
- Descriptors DEC
- CALCULATION METHODS; CHEMISTRY; ELECTRICAL PROPERTIES; EMISSION; FILMS; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES