Published February 2014 | Version v1
Journal article

CdS based novel photo-impedance light sensor

  • 1. Department of Electrical, Computer, and Systems Engineering, Rensselaer Polytechnic Institute, Troy, NY 12180 (United States)

Description

A novel photo-impedance (hybrid photocapacitive-photoresistive) sensor for visible light employs gated cadmium sulfide photoresistance connecting two fixed capacitances. The changes of the photoresistance and of the metal–insulator (dielectric)-semiconductor (MIS) under illumination affect the overall device capacitance. The MIS and photoresistor frequency dispersion allows for increasing the dynamic range by measuring the capacitance response at lower frequencies. By making this device a part of the tank circuit of a radio frequency oscillator, the information on illumination intensity can be relayed as the signal frequency and detected remotely. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/29/2/025002

Additional details

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
29
Journal Issue
2
Journal Page Range
[4 p.]
ISSN
0268-1242
CODEN
SSTEET