Crossover in domain wall potential polarity as a function of anti-notch geometry

We have carried out a systematic study on domain wall (DW) pinning at an anti-notch in a Ni80Fe20 nanowire. Micromagnetic studies reveal that the potential polarity experienced by the DW at the anti-notch is a function of both DW chirality and anti-notch geometry. A transition in the potential disruption experienced by the DW is observed when the anti-notch height-to-width ratio (HAN/WAN) is 2. This transition is due to the relative orientation of the spins in the anti-notch with respect to the transverse component of the DW. When the anti-notch acts as a potential barrier, the DW undergoes damped oscillations prior to coming to an equilibrium position. The equilibrium position is a strong function of the anti-notch dimensions when the HAN/WAN ratio <2 and is constant for HAN/WAN ≥ 2. The effect of the relative orientation between the spins in the anti-notch and the transverse component of the DW on the shape of the potential is discussed.