The influence of the preparation on layer properties of transparent indium-tin oxide electrodes

The influence of the sputtering conditions on the sheet resistance, electrochemical behaviour, and on the chemical composition of transparent indium-tin oxide electrodes is investigated. It is shown that the optimal annealing temperature for the indium-tin oxide layers is 300 0C. By all experiments a significant difference is found between layer compositions of electrodes and target composition of indium and tin. The results show that the layers are homogeneous and have a good long-time stability for electrochemical experiments. (author)