Published June 16, 1978
| Version v1
Journal article
Influence of high-temperature annealing on positron annihilation in electron-irradiated silicon
Creators
- 1. Tomskij Politekhnicheskij Inst. (USSR). Inst. Yadernoj Fiziki, Ehlektroniki i Avtomatiki
Description
no abstract available
Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi (a)
- Journal Volume
- 47
- Journal Issue
- 2
- Series
- Phys. Status Solidi A.
- Journal Page Range
- K149-K152
- ISSN
- 0031-8965
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- German Democratic Republic
- INIS RN
- 9415379
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANGULAR CORRELATION; ANNEALING; ANNIHILATION; ELECTRON BEAMS; LIFETIME; MEV RANGE 01-10; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; POSITRONS; SILICON; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BEAMS; CORRELATIONS; ELEMENTARY PARTICLES; ELEMENTS; ENERGY RANGE; FERMIONS; HEAT TREATMENTS; INTERACTIONS; LEPTON BEAMS; LEPTONS; MATTER; MEV RANGE; PARTICLE BEAMS; PARTICLE INTERACTIONS; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Short note.; Updated automatically by Metadata and Full-Text Enrichment Agent