Published August 3, 2015 | Version v1
Journal article

Tuning thermal conductivity in homoepitaxial SrTiO3 films via defects

  • 1. Department of Materials Science and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
  • 2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853-1501 (United States)
  • 3. Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
  • 4. Peter Grünberg Institute (PGI9-IT), JARA-Fundamentals of Future Information Technology, Research Centre Jülich, D-52425 Jülich (Germany)
  • 5. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
  • 6. Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853 (United States)

Description

We demonstrate the ability to tune the thermal conductivity of homoepitaxial SrTiO3 films deposited by reactive molecular-beam epitaxy by varying growth temperature, oxidation environment, and cation stoichiometry. Both point defects and planar defects decrease the longitudinal thermal conductivity (k33), with the greatest decrease in films of the same composition observed for films containing planar defects oriented perpendicular to the direction of heat flow. The longitudinal thermal conductivity can be modified by as much as 80%—from 11.5 W m−1K−1 for stoichiometric homoepitaxial SrTiO3 to 2 W m−1K−1 for strontium-rich homoepitaxial Sr1+δTiOx films—by incorporating (SrO)2 Ruddlesden-Popper planar defects

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
107
Journal Issue
5
Journal Page Range
p. 051902-051902.5
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
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