Published May 2005
| Version v1
Journal article
On the possible intensification of disintegration of a solid solution of oxygen under ultrasonic treatment of specimens of silicon
Description
By triple-crystal diffractometry, a comparative study of the scattering of X-ray emission by annealed specimens after ultrasonic treatment and by reference Cz-Si crystals after their analogous annealing at temperatures 850-1050 degree C is performed. The corresponding sizes and concentrations of the clusters of point defects and dislocation loops created in the processes of disintegration of a solid solution of oxygen and clusterization
Additional details
Publishing Information
- Journal Title
- Ukrayins'kij Fyizichnij Zhurnal (Kiev)
- Journal Volume
- 50
- Journal Issue
- no.5
- Journal Page Range
- p. 497-500
- ISSN
- 0372-400X
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 37020261
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; DIFFRACTOMETERS; DISLOCATIONS; OXYGEN; POINT DEFECTS; SCATTERING; SILICON; SOLID CLUSTERS; SOLID SOLUTIONS; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K; ULTRASONIC WAVES; X RADIATION
- Descriptors DEC
- CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DISPERSIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; IONIZING RADIATIONS; LINE DEFECTS; MEASURING INSTRUMENTS; MIXTURES; NONMETALS; RADIATIONS; SEMIMETALS; SOLUTIONS; SOUND WAVES; TEMPERATURE RANGE