Published October 2010 | Version v1
Journal article

Dislocation depinning from ordered nanophases in a model fcc crystal: From cutting mechanism to Orowan looping

  • 1. CEA, DEN, Service de Recherches de Metallurgie Physique, 91191 Gif sur Yvette (France)

Description

Based on the embedded atom method we have studied dislocation bypassing of nanophases in a model for face-centered cubic (fcc) alloys. A system in which either a purely screw or a purely edge dislocation crosses Ni3Al nanophases with L12 order in a Ni single crystal is employed as an archetypal case for strengthened fcc alloys. For a radius up to 1.5 nm the dislocations cut the nanophase and the depinning stress is found to be proportional to the area of the nanophase. For larger radii, the dislocation circumvents the nanophase and leaves an Orowan loop around the inclusion with the depinning stress increasing as the logarithm of the inclusion radius, in agreement with predictions drawn from an analytical theory proposed by Bacon, Kocks and Scattergood (Phil Mag 1973; 28: 1241). The theory is extended to determine the logarithm pre-factor for the looping regime and the depinning stress needed to cut through the nanophase. The theoretical predictions are then compared to atomistic simulations.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.actamat.2010.06.018

Additional details

Identifiers

DOI
10.1016/j.actamat.2010.06.018;
PII
S1359-6454(10)00372-1;

Publishing Information

Journal Title
Acta Materialia
Journal Volume
58
Journal Issue
17
Journal Page Range
p. 5565-5571
ISSN
1359-6454
CODEN
ACMAFD

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43039369
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ALLOYS; ATOMS; AUGMENTATION; EDGE DISLOCATIONS; FCC LATTICES; FORECASTING; INCLUSIONS; MONOCRYSTALS; NANOSTRUCTURES; SIMULATION; STRESSES
Descriptors DEC
CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; CUBIC LATTICES; DISLOCATIONS; LINE DEFECTS

Optional Information

Copyright
Copyright (c) 2010 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.