Radiation damage and implanted impurity distribution in GaAs on P ion implantation

Main results of investigations of the defect production in gallium arsenide iimplanted with P+ ions dependng on an integral flux and ion energy, temperature and orientation of crystals during the implantation are given. The effect of the above parameters on the distribution of implanted phosphorus has been investigated. UaAs crystals polished by a mechanical way and then by a chemical way were irradiated with P+ ions of 30 and 60 keV and integral fluxes from 3x1015 to 7x1017 ion/cm2 at normal temperature and during heating to 300, 350, 400 and 450 deg C. Crystals implanted were investigated by the backscattering method by means of helium ions accelerated to 1.4 MeV