Properties of diamond like carbon films by plasma based ion implantation and deposition method applying radio frequency wave and negative high voltage pulses through single feedthrough

Influence of deposition parameters on the deposition rate and the mechanical properties of diamond like carbon (DLC) films deposited by plasma based ion implantation and deposition (PBII) using combined radio frequency (RF) and negative high voltage pulses has been investigated. The hardness and deposition rate for the typical deposition condition is higher for the acetylene (C2H2) plasma than for the methane (CH4) plasma. Unlike a pulsed glow discharge process, the deposition rate can be controlled by both the average input RF power and the process pressure. The DLC films show relatively low compressive stress (0.35 GPa) at the high process pressure (2 Pa), but the stress increases at the low process pressure region (<0.8 Pa), suggesting that harder DLC films can be deposited. The adhesion of the DLC films to tungsten carbide (WC) substrates with different carbon implantation process is also evaluated