Dielectric insulating material study of semiconductor devices and radiation effect

Ionizing radiation produces electrons in the dielectric insulating material in semiconductor devices when exposed to electron beam or gamma as a radiation source. These electrons are trapped by the energy level in the forbidden gap of the dielectric material of the capacitor. These trapped electrons produce an internal electric field within the dielectric causing conduction current and charge flow. To theoretical analysis, this current with induced charge, as in a capacitor equation, is used to evaluate the parameters related to the changes in the dielectric of some devices. The practical changes in accumulated capacitance are indicated and illustrated in the equation parameters. Also, memorized capacitance induced in the oxide layer with the applied voltage