Published October 17, 2007
| Version v1
Journal article
Temperature effect on the substrate selectivity of carbon nanotube growth in floating chemical vapor deposition
- 1. Beijing Key Laboratory of Green Chemical Reaction Engineering and Technology, Department of Chemical Engineering, Tsinghua University, Beijing 100084 (China)
Description
An easy approach to control the carbon nanotube (CNT) array selectivity on Si/SiO2 in the floating chemical vapor deposition (CVD) method by adjusting the operation temperature is demonstrated. Aligned CNTs can be obtained directly on Si using a standard procedure at a relatively low temperature. After analyzing the temperature influence on different substrates, an attempt to grow an ultra-long CNT forest at the optimized temperature and without any feedstock diffusion limitation is discussed
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/18/41/415703;
- PII
- S0957-4484(07)52841-2;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 18
- Journal Issue
- 41
- Journal Page Range
- p. 415703
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39040553
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CARBON; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; NANOTUBES; SILICON OXIDES; SUBSTRATES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; ELEMENTS; NANOSTRUCTURES; NONMETALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; SURFACE COATING