Published April 1976
| Version v1
Journal article
Annealing behavior of the insulating layer in ion-implanted CdS
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1143/jjap.15.723;
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics
- Journal Volume
- 15
- Journal Issue
- 4
- Series
- Jpn. J. Appl. Phys.
- Journal Page Range
- 723-724
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 8288147
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ANNEALING; CADMIUM SULFIDES; DOPED MATERIALS; DOSE RATES; ELECTRIC CONDUCTIVITY; HIGH TEMPERATURE; ION IMPLANTATION; MEDIUM TEMPERATURE; MONOCRYSTALS; NITROGEN IONS; SEMICONDUCTOR DIODES; TEMPERATURE DEPENDENCE
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTALS; ELECTRICAL PROPERTIES; HEAT TREATMENTS; INORGANIC PHOSPHORS; IONS; PHOSPHORS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SULFIDES; SULFUR COMPOUNDS
Optional Information
- Notes
- Published in summary form only.; Updated automatically by Metadata and Full-Text Enrichment Agent