Fabrication and thermoelectric performance of textured n-type Bi2(Te,Se)3 by spark plasma sintering
- 1. State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Dingxi Road 1295, Shanghai 200050 (China)
Description
The n-type Bi2(Te,Se)3 thermoelectric materials with preferred grain orientation have been fabricated through the spark plasma sintering (SPS) technique. The c-axis of the grains in the sintered samples were preferentially oriented parallel to the pressing direction, the orientation factor of the (0 0 l) planes changed from 0.4 to 0.85 with the sintering conditions. The anisotropy was investigated by measuring the electrical conductivities in the two directions perpendicular and parallel to the pressing direction. The optimal figure of merit ZT (ZT = α 2 σT/κ) of the sintered materials in the direction perpendicular to the pressing direction was comparative to that of the zone-melted materials in the same crystallographic direction, while the bending strength reached about 80 MPa, which is 7-8 times of that of the zone-melted materials
Additional details
Identifiers
- DOI
- 10.1016/j.mseb.2005.01.002;
- PII
- S0921-5107(05)00010-3;
Publishing Information
- Journal Title
- Materials Science and Engineering. B, Solid-State Materials for Advanced Technology
- Journal Volume
- 117
- Journal Issue
- 3
- Journal Page Range
- p. 334-338
- ISSN
- 0921-5107
- CODEN
- MSBTEK
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37114479
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANISOTROPY; BENDING; BISMUTH SELENIDES; BISMUTH TELLURIDES; ELECTRIC CONDUCTIVITY; GRAIN ORIENTATION; N-TYPE CONDUCTORS; PERFORMANCE; PRESSING; SINTERED MATERIALS; SINTERING; THERMOELECTRIC MATERIALS; THERMOELECTRIC PROPERTIES
- Descriptors DEC
- BISMUTH COMPOUNDS; CHALCOGENIDES; DEFORMATION; ELECTRICAL PROPERTIES; FABRICATION; MATERIALS; MATERIALS WORKING; MICROSTRUCTURE; ORIENTATION; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR MATERIALS; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.