Published February 1983
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Neutron-transmutation-doped germanium bolometers
Description
Six slices of ultra-pure germanium were irradiated with thermal neutron fluences between 7.5 x 1016 and 1.88 x 1018 cm-2. After thermal annealing the resistivity was measured down to low temperatures (< 4.2 K) and found to follow the relationship rho - rho0exp(δ/T) in the hopping conduction regime. Also, several junction FETs were tested for noise performance at room temperature and in an insulating housing in a 4.2K cryostat. These FETs will be used as first stage amplifiers for neutron-transmutation-doped germanium bolometers
Availability note (English)
MF available from INIS under the Report Number; Available from NTIS, PC A02/MF A01 as DE83015993.Files
14803017.pdf
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Additional details
Publishing Information
- Imprint Pagination
- 13 p.
- Report number
- LBL--15410
Conference
- Title
- 7. international conference on infrared and millimeter waves.
- Dates
- 14-18 Feb 1983.
- Place
- Marseilles (France).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 14803017
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BOLOMETERS; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GERMANIUM; INFRARED RADIATION; NOISE; PERFORMANCE TESTING; PHYSICAL RADIATION EFFECTS; PRODUCTION; THERMAL NEUTRONS; TRANSMUTATION
- Descriptors DEC
- BARYONS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; HADRONS; MEASURING INSTRUMENTS; METALS; NEUTRONS; NUCLEONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR DEVICES; TESTING; TRANSISTORS
Optional Information
- Secondary number(s)
- CONF-830235--2.