Influence of the rate of pulsed electron irradiation on the formation of defects in p-type silicon

A change in the rate of irradiation can alter the quasisteady concentrations of vacancies V and interstitial atoms I participating in secondary-defect formation, because the probability of separation of Frenkel pairs is determined also by the degree ionization and the parameters of a radiation pulse. The authors investigated p-type silicon samples grown by the Czochralski method in which the concentration of boron was ∼ 6 x 1014 cm-3; the concentrations of oxygen and carbon, deduced from infrared absorption, were ∼6 x 1016 and ∼1 x 1017 cm-3. Samples were irradiated with fast electrons of ∼1 MeV energy