Electrical, optical and structural properties of titanium dioxide dielectric films formed by DC magnetron sputtering

Titanium dioxide thin films had been deposited onto silicon substrate using DC magnetron sputtering. The research was carried out on a film of thickness 85 nm. XRD (X-ray diffraction) analyses reveal the anatase nanocryatline nature of the film. The dielectric constant of TiO₂ thin film had been determined from the C-V (capacitance-voltage) characterization. Relatively low dielectric constant can be explained by high leakage current and more research is needed to solve leakage current problem without decreasing effective dielectric constant. (author)