Simulations of Single-Event Upset in SRAMs Induced by Neutrons With Geant4

The sensitivity of SRAMs to single-event upsets induced by neutrons with decreasing feature sizes was investigated using the Monte-Carlo code Geant4. Their device architecture and single-event upset cross section computation approach were presented. The single-event upset cross sections were analyzed for mono-energetic neutron and neutrons of fission spectrum of a reactor and discussed on the basis of different parameters such as the sensitive volume, the critical charge and the incident neutron energy. Small-size SRAM devices are more sensitive than large-size devices on single-event upset effect induced by low-energy neutron. (authors)