Published February 1989
| Version v1
Journal article
Photoelectrochemical investigation of CdSiAs/sub 2/
- 1. Institut de physique appliquee, EPF Lausanne, Lausanne (Switzerland)
- 2. Lab. fur Festkorperphysik, ETH Zurich, Zurich (Switzerland)
Description
The CdSiAs/sub 2//aqueous electrolyte interface has been investigated by current-potential, electrolyte-electroreflectance (EER), and capacity measurements. The direct gap of 1.55 eV has been verified by EER and quantum yield measurements. For E parallel c the quantum efficiency exceeds 50% over a broad spectral range. The doping concentration obtained from Mott-Schottky plots is ∼2 . 10/sup 17//cm/sup 3/. Under steady-state conditions the Mott-Schottky plots yielded a flatband potential of -0.19 V/sub SCE/ in 1M H/sub 2/SO/sub 4/. Due to anodic etching it tends to shift to +0.3 V/sub SCE/
Additional details
Publishing Information
- Journal Title
- Journal of the Electrochemical Society
- Journal Volume
- 136
- Journal Issue
- 2
- Series
- J. Electrochem. Soc.
- Journal Page Range
- 382-384
- ISSN
- 0013-4651
- CODEN
- JESOA
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 20054542
- Subject category
- S30: DIRECT ENERGY CONVERSION;
- Descriptors DEI
- ANODES; ARSENIC; CADMIUM; CHEMICAL REACTION YIELD; ELECTROCHEMISTRY; ELECTROLYTES; ETCHING; PHOTOCHEMISTRY; QUANTUM EFFICIENCY; SCHOTTKY EFFECT; SILICON; STEADY-STATE CONDITIONS
- Descriptors DEC
- CHEMISTRY; EFFICIENCY; ELECTRODES; ELEMENTS; METALS; SEMIMETALS