Spin Transport Investigations in Bilayer Graphene

We study the spin-based electron transport properties in bilayer graphene with half-metallic ferromagnetic (HMF) CrO₂ electrodes. Out-of-plane bilayer graphene has been examined in this paper. A high magneto-resistance ratio (MR) of ∼99% is obtained in the bilayer structure for a potential range of 0 to 0.8 V, after which MR drops because of the increase in spin-up current in the anti-parallel configuration at 1.2 V. High spin filtration of ∼100% is obtained at all bias points. Transmission spectrum studies show that a large number of electronic states are present at the Fermi level in bilayer graphene, which would result in high current.