Published 1995 | Version v1
Miscellaneous

X-ray diffraction investigations of silicon single crystals structure after irradiation by high energy ions

  • 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
  • 2. Institute of Semiconductor Physics, National Academy of Sciences, Kiev (Ukraine)

Description

no abstract available

Part of:
Abstracts of 2. International School and Symposium on Physics in Materials Science

Additional details

Publishing Information

Imprint Title
Abstracts of 2. International School and Symposium on Physics in Materials Science
Imprint Pagination
132 p.
Journal Page Range
p. SC1.1.

Conference

Title
2. International School and Symposium on Physics in Materials Science.
Dates
17-23 Sep 1995.
Place
Jaszowiec (Poland).

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
29033557
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference, No Abstract, Non-conventional Literature
Descriptors DEI
CRYSTAL DEFECTS; ION BEAMS; IRRADIATION; MEETINGS; MONOCRYSTALS; PHYSICAL RADIATION EFFECTS; SILICON; X-RAY DIFFRACTION
Descriptors DEC
BEAMS; COHERENT SCATTERING; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELEMENTS; RADIATION EFFECTS; SCATTERING; SEMIMETALS

Optional Information