Published December 1999 | Version v1
Journal article Metadata-only

Distribution of hydrogen in silicon and silicon carbide after high temperature proton implantation

Creators

  • 1. Sankt-Peterburgskij Gosudarstvennyj Tekhnicheskij Univ., Sankt-Peterburg (Russian Federation)
  • 2. RAN, Fiziko-Tekhnicheskij Inst. im. A.F. Ioffe, Sankt-Peterburg (Russian Federation)

Description

Distribution of hydrogen in Si and SiC after high temperature proton implantation (Tirr = 20 - 700 deg C) is investigated by Secondary Ion Mass Spectroscopy depth profiling. It is shown that profile of hydrogen concentration in SiC does not change significantly with the temperature of implantation. The profile of hydrogen concentration in Si changes dramatically at Tirr ∼ 300 deg C, and the hydrogen profile does not show any concentration gradient and profile peak at Tirr ∼ 700 deg C

Abstract (Russian)

Методом вторично-ионной масс-спектрометрии изучено распределение водорода в Si и SiC после высокотемпературного протонного облучения (Тirr = 20 - 700 град С). Показано, что в SiC профили концентрации водорода слабо зависят от температуры облучения. В Si заметное изменение профиля наблюдается уже при Тirr ∼ 300 град С, а при Тirr ∼ 700 град С профиль полностью утрачивает градиент своей крнцентрации

Additional details

Additional titles

Original title (Russian)
Распределение водорода в кремнии и карбиде кремния после высокотемпературного протонного облучения

Publishing Information

Journal Title
Fizika i Tekhnika Poluprovodnikov
Journal Volume
33
Journal Issue
12
Journal Page Range
p. 1409-1410
ISSN
0015-3222
CODEN
FTPPA4

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
31034988
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CONCENTRATION RATIO; HYDROGEN IONS; ION IMPLANTATION; KEV RANGE 10-100; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDES; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; ELEMENTS; ENERGY RANGE; IONS; KEV RANGE; MATERIALS; NUCLEON BEAMS; PARTICLE BEAMS; RADIATION EFFECTS; SEMIMETALS; SILICON COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
8 refs., 1 fig.