Published August 2003
| Version v1
Journal article
Low-temperature investigation of the magnetoresistivity in modulation-doped Si/SiGe quantum wells
- 1. Dongguk Univ., Seoul (Korea, Republic of)
Description
We have performed magnetotransport measurements up to 15 T at temperatures down to 30mK on a set of n-channel Si/SiGe modulation-doped samples grown by using gas source molecular beam epitaxy. The presences of clear quantum Hall palteaus and dissipationless resistivity minima attest to the high quality of this material. Analysis of the occurrence of integer, spin-split and valley-split minima in the Shubnikov-de Haas oscillations has been performed using Ando's model for Landau level broadening by a Gaussian scattering potential
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 39
- Journal Issue
- 2
- Series
- 16 refs, 4 figs, 2 tabs
- Journal Page Range
- p. 318-323
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 35045447
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- GERMANIUM COMPOUNDS; HALL EFFECT; MAGNETORESISTANCE; MODULATION; MOLECULAR BEAM EPITAXY; QUANTUM WELLS; SHUBNIKOV-DE HAAS EFFECT; SILICON; SILICON COMPOUNDS; TEMPERATURE RANGE 0000-0013 K
- Descriptors DEC
- CRYSTAL GROWTH METHODS; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; EPITAXY; NANOSTRUCTURES; PHYSICAL PROPERTIES; SEMIMETALS; TEMPERATURE RANGE