Published December 14, 2013
| Version v1
Journal article
Multiexciton complex from extrinsic centers in AlGaAs epilayers on Ge and Si substrates
Creators
- 1. Dipartimento di Fisica e Astronomia, LENS and CNISM, Università di Firenze, Via Sansone 1, I-50019 Firenze (Italy)
- 2. Dipartimento di Scienza dei Materiali and L-NESS, Università di Milano Bicocca, Via Cozzi 53, I-20125 Milano (Italy)
- 3. Dipartimento di Fisica and L-NESS, Politecnico di Milano, Via Anzani 42, 22100 Como (Italy)
Description
The multiexciton properties of extrinsic centers from AlGaAs layers on Ge and Si substrates are addressed. The two photon cascade is found both in steady state and in time resolved experiments. Polarization analysis of the photoluminescence provides clearcut attribution to neutral biexciton complexes. Our findings demonstrate the prospect of exploiting extrinsic centers for generating entangled photon pairs on a Si based device
Additional details
Identifiers
- DOI
- 10.1063/1.4844375;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 114
- Journal Issue
- 22
- Journal Page Range
- p. 224314-224314.3
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45087368
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; PHOTONS; QUANTUM ENTANGLEMENT; STEADY-STATE CONDITIONS; SUBSTRATES; TIME RESOLUTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; BOSONS; ELEMENTARY PARTICLES; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MASSLESS PARTICLES; PHOTON EMISSION; PNICTIDES; RESOLUTION; TIMING PROPERTIES
Optional Information
- Notes
- (c) 2013 AIP Publishing LLC