Published 2018 | Version v1
Miscellaneous Metadata-only

An improvement of compact pulsed power supply for ion source using 13kV-SiC-MOSFET

Creators

  • 1. Pulsed Power Japan Laboratory Ltd. (PPJ), Kusatsu, Shiga (Japan)
  • 2. Japan Atomic Energy Agency, Sector of Nuclear Science Research, J-PARC Center, Tokai, Ibaraki (Japan)

Description

SiC-Power devices having a breakdown voltage of more than 13 kV are available thanks to recent scientific progress in semiconductor devices and related arts. The SiC-power semiconductors are superior to silicon in material properties, and have characteristics of high withstand voltage, high current, high thermal conductivity and low loss. There is a Si-MOSFET based pulsed power source for the ion source in the J-PARC accelerator. In this paper we show an example of miniaturization of the power source and simplification of circuit control by replacing the Si-MOSFETs with SiC-MOSFETs. (author)

Part of:
Proceedings of the 15th annual meeting of Particle Accelerator Society of Japan

Additional details

Additional titles

Original title (Japanese)
13kV-SiC-MOSFETを用いたイオン源電源の改善

Identifiers

URL
https://www.pasj.jp/web_publish/pasj2018/proceedings/;

Publishing Information

Imprint Title
Proceedings of the 15th annual meeting of Particle Accelerator Society of Japan
Imprint Pagination
[1380 p.]
Journal Page Range
p. 488-489

Conference

Title
15. annual meeting of Particle Accelerator Society of Japan
Acronym
PASJ2018
Dates
7-10 Aug 2018
Place
Nagaoka, Niigata (Japan)

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
50030840
Subject category
S43: PARTICLE ACCELERATORS;
Resource subtype / Literary indicator
Conference, Non-conventional Literature
Descriptors DEI
BEAM EXTRACTION; ELECTRIC CONDUCTIVITY; ENERGY TRANSFER; HYDROGEN IONS 1 MINUS; ION BEAMS; ION SOURCES; J-PARC LINAC; J-PARC SYNCHROTRONS; MOSFET; POWER LOSSES; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SWITCHES; THERMAL CONDUCTIVITY
Descriptors DEC
ACCELERATORS; ANIONS; BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; CYCLIC ACCELERATORS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; ENERGY LOSSES; EQUIPMENT; FIELD EFFECT TRANSISTORS; HYDROGEN IONS; IONS; LINEAR ACCELERATORS; LOSSES; MATERIALS; MOS TRANSISTORS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SILICON COMPOUNDS; SYNCHROTRONS; THERMODYNAMIC PROPERTIES; TRANSISTORS

Optional Information

Notes
5 refs., 4 figs. Imprint:#7B2C#15#56DE##65E5##672C##52A0##901F##5668##5B66##4F1A##5E74##4F1A#