Published June 1995
| Version v1
Journal article
A review of standardization issues for total reflection X-ray fluorescence and vapor phase decomposition/total reflection X-ray fluorescence
Description
Total reflection X-ray fluorescence (TXRF) and vapor phase decomposition (VPD) followed by TXRF have become widespread methods for measuring surface metal contamination on silicon wafers. For quantification, TXRF and VPD/TXRF require reference samples. Since the approaches to making and using these reference samples have significantly varied among TXRF manufacturers and users worldwide, there exists some confusion about the quantification of TXRF and VPD/TXRF. This paper summarizes the basic issues behind TXRF and VPD/TXRF quantification using reference samples. (author)
Additional details
Publishing Information
- Journal Title
- Analytical Sciences
- Journal Volume
- 11
- Journal Issue
- 3
- Journal Page Range
- p. 511-513.
- ISSN
- 0910-6340
- CODEN
- ANSCEN
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 27001646
- Subject category
- S07: ISOTOPES AND RADIATION SOURCES;
- Descriptors DEI
- CONCENTRATION RATIO; DECOMPOSITION; ELEMENT ABUNDANCE; FLUORESCENCE SPECTROSCOPY; IMPURITIES; REFLECTION; SEMICONDUCTOR MATERIALS; SILICON; STANDARDIZATION; SURFACES; X RADIATION; X-RAY FLUORESCENCE ANALYSIS; X-RAY SPECTROSCOPY
- Descriptors DEC
- ABUNDANCE; CHEMICAL ANALYSIS; CHEMICAL REACTIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; EMISSION SPECTROSCOPY; IONIZING RADIATIONS; MATERIALS; NONDESTRUCTIVE ANALYSIS; RADIATIONS; SEMIMETALS; SPECTROSCOPY; X-RAY EMISSION ANALYSIS