Published August 1, 2012 | Version v1
Journal article

Comparison between various finite-size supercell correction schemes for charged defect calculations

  • 1. Department of Physics, Tampere University of Technology, P.O. Box 692, FI-33101 Tampere (Finland)
  • 2. Chaire de Simulation à l'Echelle Atomique (CSEA), Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

Description

We present a comparison of the most common finite-size supercell correction schemes for charged defects in density functional theory calculations. Considered schemes include those proposed by Makov and Payne (MP), Lany and Zunger (LZ), and Freysoldt, Neugebauer, and Van de Walle (FNV). The role of the potential alignment is also assessed. Supercells of various sizes are considered and the corrected formation energies are compared to the values obtained by extrapolation to large supercells. For defects with localized charge distributions, we generally find that the FNV scheme slightly improves upon the LZ one, while the MP scheme generally overcorrects except for point-charge-like defects. We also encountered more complex situations in which the extrapolated values do not coincide. Inspection of the defect electronic structure indicates that this occurs when the defect Kohn-Sham states are degenerate with band-edge states of the host.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physb.2011.08.028

Additional details

Identifiers

DOI
10.1016/j.physb.2011.08.028;
PII
S0921-4526(11)00781-2;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
407
Journal Issue
15
Journal Page Range
p. 3063-3067
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
26. international conference on defects in semiconductors
Dates
18-22 Jul 2011
Place
Nelson (New Zealand)

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.