Schottky behavior at Ag/Nb-1.0 wt.%-doped SrTiO3 interface

In this work, Schottky junctions of Ag/Nb-1.0 wt%-doped SrTiO3 (NSTO) have been fabricated by magnetic controlled sputtering technique and annealing process after sputtering. The junction between these two materials exhibits good Schottky rectifying behavior after high-temperature annealing, and the capacitance-voltage characteristics show linear C -2-V relationships in the reverse condition. The barrier heights were determined to be 2.75 eV or so by current-voltage and capacitance-voltage methods, respectively. I-V characteristics revealed that high-temperature annealing in oxygen at 700 C alters this thin surface barrier, reduces the leakage current remarkably