Unusual ambipolar behavior in zinc nitride thin-film transistors on plastic substrates

In this work, an unusual ambipolar behavior in zinc nitride (Zn₃N₂) based thin film transistors (TFTs) on plastic substrates is presented. Polyethylene terephthalate is used as flexible substrate. The Zn₃N₂ thin film is deposited by magnetron radio-frequency sputtering at room temperature, whereas spin-on glass is used as gate insulator. The transfer and output characteristics are the typical reported for ambipolar TFTs. The extracted linear mobility was 1.8 cm² V⁻¹ s⁻¹ for the n-type region and 0.15 cm² V⁻¹ s⁻¹ for the p-type region. Using a physically-based simulator, the ambipolar output characteristics are simulated. The results presented are promising to develop novel ambipolar Zn₃N₂ TFTs. (paper)