Published August 1, 2010 | Version v1
Journal article

A model of random deposition with relaxation on fractal substrates

  • 1. Department of Physics, Soongsil University, Seoul 156-743 (Korea, Republic of)

Description

A model of random deposition with relaxation on both Sierpinski gasket and checkerboard fractal substrates is studied. The interface width W grows as tβ at early time t and it follows Lα for the saturated regime t>>Lz, where L is the system size. We obtain β≈0.158, α≈0.374 for the Sierpinski gasket and β≈0.203, α≈0.507 for the checkerboard fractal. The dynamic exponent z≈2.35 for the Sierpinski gasket and z≈2.50 for the checkerboard fractal were obtained by using the relation z = α/β. They satisfy the scaling relation 2α + df = z, where df is the fractal dimension of the substrate, and they are in good agreement with the predictions of a fractional Langevin equation

Availability note (English)

Available from http://dx.doi.org/10.1088/1742-5468/2010/08/P08008

Additional details

Identifiers

DOI
10.1088/1742-5468/2010/08/P08008;
PII
S1742-5468(10)62155-3;

Publishing Information

Journal Title
Journal of Statistical Mechanics
Journal Volume
2010
Journal Issue
08
Journal Page Range
[8 p.]
ISSN
1742-5468

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46001872
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
DEPOSITION; FRACTALS; GASKETS; INTERFACES; LANGEVIN EQUATION; RANDOMNESS; RELAXATION; SUBSTRATES
Descriptors DEC
EQUATIONS; SEALS