Published August 1, 2010
| Version v1
Journal article
A model of random deposition with relaxation on fractal substrates
Creators
- 1. Department of Physics, Soongsil University, Seoul 156-743 (Korea, Republic of)
Description
A model of random deposition with relaxation on both Sierpinski gasket and checkerboard fractal substrates is studied. The interface width W grows as tβ at early time t and it follows Lα for the saturated regime t>>Lz, where L is the system size. We obtain β≈0.158, α≈0.374 for the Sierpinski gasket and β≈0.203, α≈0.507 for the checkerboard fractal. The dynamic exponent z≈2.35 for the Sierpinski gasket and z≈2.50 for the checkerboard fractal were obtained by using the relation z = α/β. They satisfy the scaling relation 2α + df = z, where df is the fractal dimension of the substrate, and they are in good agreement with the predictions of a fractional Langevin equation
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-5468/2010/08/P08008Additional details
Identifiers
- DOI
- 10.1088/1742-5468/2010/08/P08008;
- PII
- S1742-5468(10)62155-3;
Publishing Information
- Journal Title
- Journal of Statistical Mechanics
- Journal Volume
- 2010
- Journal Issue
- 08
- Journal Page Range
- [8 p.]
- ISSN
- 1742-5468
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46001872
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- DEPOSITION; FRACTALS; GASKETS; INTERFACES; LANGEVIN EQUATION; RANDOMNESS; RELAXATION; SUBSTRATES
- Descriptors DEC
- EQUATIONS; SEALS