Published June 11, 2008 | Version v1
Journal article Metadata-only

Synchrotron X-ray topography and electrical characterization of epitaxial GaAs p-i-n structures

Creators

  • 1. Micro and Nanosciences Laboratory, Helsinki University of Technology, P.O. Box 3500, 02015 HUT (Finland)
  • 2. Laboratory of Physical Phenomena in Epitaxial Semiconductor, Solid State Electronics Department, Ioffe Physico-Technical Institute RAS, Polytechnicheskaya 26, 194021 Saint Petersburg (Russian Federation)
  • 3. Vapor Phase Epitaxy and Devices Ltd., Engels 27, 194156 Saint Petersburg (Russian Federation)

Description

Results from synchrotron X-ray topography and electrical characterization of thick epitaxial GaAs p-i-n structures suitable for manufacturing of radiation detectors are reported. The structures under study have been grown with hydride vapor phase epitaxy method. A comprehensive set of large-area transmission, large-area back-reflection and transmission section topographs are analyzed. The X-ray topography results are compared with the dark current density of the detector diodes. The X-ray topographs show the defect structure in the samples and provide important information for epitaxial process optimization

Availability note (English)

Available from http://dx.doi.org/10.1016/j.nima.2008.03.054

Additional details

Identifiers

DOI
10.1016/j.nima.2008.03.054;
PII
S0168-9002(08)00434-8;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
Journal Volume
591
Journal Issue
1
Journal Page Range
p. 192-195
ISSN
0168-9002
CODEN
NIMAER

Conference

Title
9. international workshop on radiation imaging detectors
Dates
22-26 Jul 2007
Place
Erlangen (Germany)

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40033974
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CURRENT DENSITY; DEFECTS; GALLIUM ARSENIDES; HYDRIDES; MANUFACTURING; OPTIMIZATION; RADIATION DETECTORS; SYNCHROTRONS; TOPOGRAPHY; TRANSMISSION; VAPOR PHASE EPITAXY; X RADIATION
Descriptors DEC
ACCELERATORS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; CYCLIC ACCELERATORS; ELECTROMAGNETIC RADIATION; EPITAXY; GALLIUM COMPOUNDS; HYDROGEN COMPOUNDS; IONIZING RADIATIONS; MEASURING INSTRUMENTS; PNICTIDES; RADIATIONS

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.