Nano-structure of transition-metal (Ti, Ni)/SiC system: photo-emission electron microscopy and soft X-ray fluorescence spectroscopy
Description
We have studied nano-structure of transition-metal film (Ti, Ni)/SiC (substrate) contact systems by using a photo-emission electron microscopy (PEEM) and a soft X-ray fluorescence spectroscopy (SXFS). The PEEM and SXFS studies using light sources of a Hg lamp and a synchrotron radiation, respectively, have been applied to a nondestructive buried interface analyses and a surface nano-structure study for a thin-film (Ti, Ni)/substrate (3C-, 4H-SiC) contact system. A PEEM image after a heat-treatment of Ti (10 nm)/3C-SiC contact system at 800 deg. C has shown small clusters of 2-3 μm in diameter on a specimen surface. On the other hand, a PEEM image of Ni (4 nm)/3C-SiC contact system has shown uniform surface morphology with increasing annealing-temperature up to 650 deg. C. Therefore, Ti (ultra thin film)/SiC (substrate) system is expected to be a good candidate to form nano-structure on top, whereas Ni is suitable for uniform contact at elevated temperatures. In SXFS, we have studied in-depth structure through the electronic states from deep inside to near surface region by changing an angle of incident light against a sample surface. Valence band electronic structure in the top thin-film for Ti/4H-SiC contact system is considered to be a combination of Ti-silicide and -carbide and/or graphite from SXFS study. On the other hand, it is the case that Ni/4H-SiC contact system is composed of Ni-silicide with crystallized graphite due to a heat-treatment until 950 deg. C
Additional details
Identifiers
- DOI
- 10.1016/S0169-4332(03)00444-6;
- arXiv
- arXiv:physics/9802049v1;
- PII
- S0169433203004446;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 216
- Journal Issue
- 1-4
- Journal Page Range
- p. 187-191
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 4. international symposium on the control of semiconductor interfaces
- Dates
- 21-25 Oct 2002
- Place
- Karuizawa (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38086744
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ELECTRON EMISSION; ELECTRONIC STRUCTURE; FLUORESCENCE SPECTROSCOPY; GRAPHITE; NICKEL SILICIDES; PHOTOELECTRON SPECTROSCOPY; SILICON CARBIDES; SOFT X RADIATION; SYNCHROTRON RADIATION; TEMPERATURE RANGE 0400-1000 K; THIN FILMS; TITANIUM SILICIDES; TRANSITION ELEMENTS
- Descriptors DEC
- BREMSSTRAHLUNG; CARBIDES; CARBON; CARBON COMPOUNDS; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; ELEMENTS; EMISSION; EMISSION SPECTROSCOPY; FILMS; HEAT TREATMENTS; IONIZING RADIATIONS; METALS; MINERALS; NICKEL COMPOUNDS; NONMETALS; RADIATIONS; SILICIDES; SILICON COMPOUNDS; SPECTROSCOPY; TEMPERATURE RANGE; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; X RADIATION
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.