Published February 1982
| Version v1
Journal article
Low-temperature deposition of TaB and TaB2 by chemical vapor deposition
Description
Tantalum borides were deposited on a copper substrate from a gas phase TaCl5-BCl3-H2-Ar in the temperature range of 540-8000C. TaB2 (single-phase) was deposited at a source gas flow ratio (BCl3/TaCl5) of six and a temperature above 6000C. On the other hand, TaB (single-phase) was deposited at BCL3/TaCl5 = 2-4 and 600-7000C. The microhardness of TaB and TaB2 were 3250 and 3150 kg/mm2, respectively. The TaB layer was stable to oxidation below 7000C and to acid corrosion. (orig.)
Additional details
Publishing Information
- Journal Title
- J. Nucl. Mater.
- Journal Volume
- 105
- Journal Issue
- 2/3
- Series
- J. Nucl. Mater.
- Journal Page Range
- 262-268
- ISSN
- 0022-3115
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 13713423
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; COPPER; FILMS; LAYERS; LOW TEMPERATURE; SUBSTRATES; TANTALUM BORIDES
- Descriptors DEC
- BORIDES; BORON COMPOUNDS; CHEMICAL COATING; DEPOSITION; ELEMENTS; METALS; SURFACE COATING; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS