Published 1981
| Version v1
Journal article
Laser pulse annealing of Hf implanted Ni monocrystals
- 1. Bonn Univ. (Germany, F.R.). Inst. fuer Strahlen- und Kernphysik
- 2. Bell Labs., Murray Hill, NJ (USA)
Description
no abstract available
Additional details
Additional titles
- Original title (German)
- Laserpulstempern von Hf implantierten Ni Einkristallen
Publishing Information
- Journal Title
- Verh. Dtsch. Phys. Ges.
- Journal Volume
- 16
- Journal Issue
- 3
- Series
- Verh. Dtsch. Phys. Ges.
- Journal Page Range
- 335
- ISSN
- 0420-0195
Conference
- Title
- Spring meeting of the technical committee on semiconductor physics.
- Dates
- 9 - 14 Mar 1981.
- Place
- Muenster, Germany, F.R.
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 12639710
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ANNEALING; HAFNIUM IONS; HAFNIUM 181; ION IMPLANTATION; KEV RANGE 10-100; LASER RADIATION; NICKEL; PERTURBED ANGULAR CORRELATION
- Descriptors DEC
- ANGULAR CORRELATION; ATOMIC IONS; BETA DECAY RADIOISOTOPES; BETA-MINUS DECAY RADIOISOTOPES; CHARGED PARTICLES; CORRELATIONS; DAYS LIVING RADIOISOTOPES; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; EVEN-ODD NUCLEI; HAFNIUM ISOTOPES; HEAT TREATMENTS; HEAVY NUCLEI; IONS; ISOTOPES; KEV RANGE; METALS; NUCLEI; RADIATIONS; RADIOISOTOPES; TRANSITION ELEMENTS
Optional Information
- Notes
- Published in summary form only.