Investigation of the potential barrier lowering for quasi-ballistic transport in short channel MOSFETs

In this paper, the quasi-ballistic carrier transport in short channel MOSFETs is investigated from the point of potential barrier lowering. To investigate the ballistic characteristic of transistors, we extracted the channel backscattering coefficient and the ballistic ratio from experimental data obtained by RF C-V and DC I-V measurements. Two factors that modulate the potential barrier height, besides the gate bias, are considered in this work: the drain bias (VDS) and the channel doping concentration (NA). We extract the critical length by calculating the potential drop in the channel region and conclude that the drain bias and the channel doping concentration affect the quasi-ballistic carrier transport.