Theoretical study on the effect of dopant positions and dopant density on transport properties of a BN co-doped SiC nanotube

We investigate the effect of dopant (boron 'B'–nitrogen 'N') position and density on electronic transport properties of a BN co-doped silicon carbide nanotube (SiCNT). The results show an increase in conductance when both BN impurities are far in space from each other. Orbital delocalization and appearance of new electronic states around Fermi level contribute to the current when this spacing is increased. On the other hand, a reduction in SiCNT conductivity was observed when BN dopant density was increased. This is attributed to the electronic states moving away from the Fermi level and orbital localization at higher bias voltages.