Published March 15, 2005
| Version v1
Journal article
On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs
Creators
- 1. Department of Electrical Engineering, Eindhoven University of Technology, EH 5.15, Den Dolech 2, P.O. Box 513, 5600 MB Eindhoven (Netherlands)
Description
This is a critical study on the McWhorter model, taking into account the conditions for additivity of GR spectra. A major finding is that the model does indeed give 1/f spectra. The calculated α-values agree with experimental values of MOSFETs in strong inversion. A simple comparison of experimental α-values with values calculated from a Δμ-model or a McWhorter Δn-model does not allow us to decide which the correct noise source is. However, the dependence of α on the gate voltage has often been used as a criterion for the correct source. Nevertheless, the VGT-dependence does not lead to unambiguous conclusions either
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2004.09.106;
- PII
- S0921-4526(04)01263-3;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 357
- Journal Issue
- 3-4
- Journal Page Range
- p. 507-524
- ISSN
- 0921-4526
- CODEN
- PHYBE3
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37065480
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; MOSFET; NOISE; RECOMBINATION; SPECTRA
- Descriptors DEC
- EVALUATION; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.