Published March 15, 2005 | Version v1
Journal article

On the additivity of generation-recombination spectra Part 3: The McWhorter model for 1/f noise in MOSFETs

  • 1. Department of Electrical Engineering, Eindhoven University of Technology, EH 5.15, Den Dolech 2, P.O. Box 513, 5600 MB Eindhoven (Netherlands)

Description

This is a critical study on the McWhorter model, taking into account the conditions for additivity of GR spectra. A major finding is that the model does indeed give 1/f spectra. The calculated α-values agree with experimental values of MOSFETs in strong inversion. A simple comparison of experimental α-values with values calculated from a Δμ-model or a McWhorter Δn-model does not allow us to decide which the correct noise source is. However, the dependence of α on the gate voltage has often been used as a criterion for the correct source. Nevertheless, the VGT-dependence does not lead to unambiguous conclusions either

Additional details

Identifiers

DOI
10.1016/j.physb.2004.09.106;
PII
S0921-4526(04)01263-3;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
357
Journal Issue
3-4
Journal Page Range
p. 507-524
ISSN
0921-4526
CODEN
PHYBE3

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37065480
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
COMPARATIVE EVALUATIONS; ELECTRIC POTENTIAL; MOSFET; NOISE; RECOMBINATION; SPECTRA
Descriptors DEC
EVALUATION; FIELD EFFECT TRANSISTORS; MOS TRANSISTORS; SEMICONDUCTOR DEVICES; TRANSISTORS

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.