Published May 1986 | Version v1
Journal article Metadata-only

Properties of nucleus-doped indium arsenide

Creators

  • 1. Nauchno-Issledovatel'skij Fiziko-Khimicheskij Inst., Moscow (USSR)

Description

A real possibility of nuclear doping of indium arsenide monocrystal with tin in a rather wide concentration range (1017-1019 cm-3) is shown. Optimal nuclear-doped indium arsenide annealing temperatures depending on the material doping level are determined. It is stated that donor-acceptor interaction is significant in the formation and annealing of radiation-induced defects in indium arsenide

Additional details

Additional titles

Original title (Russian)
Свойства ядерно-легированного арсенида индия

Publishing Information

Journal Title
Fiz. Tekh. Poluprovodn.
Journal Volume
20
Journal Issue
5
Series
Fiz. Tekh. Poluprovodn.
Journal Page Range
822-827
ISSN
0015-3222
CODEN
FTPPA

INIS

Country of Publication
Russian Federation
Country of Input or Organization
USSR
INIS RN
18006889
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHARGE CARRIERS; CRYSTAL DOPING; ELECTRON DENSITY; FAST NEUTRONS; FRENKEL DEFECTS; HIGH TEMPERATURE; INDIUM ARSENIDES; LATTICE PARAMETERS; MONOCRYSTALS; NEUTRON FLUENCE; PHYSICAL RADIATION EFFECTS; QUANTITY RATIO; TEMPERATURE DEPENDENCE; THERMAL NEUTRONS; TIN ADDITIONS; VERY HIGH TEMPERATURE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; BARYONS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELEMENTARY PARTICLES; FERMIONS; HADRONS; INDIUM COMPOUNDS; NEUTRONS; NUCLEONS; POINT DEFECTS; RADIATION EFFECTS; VACANCIES

Optional Information

Notes
For English translation see the journal Soviet Physics - Semiconductors (USA).