Published February 23, 2015
| Version v1
Journal article
Absorption enhancement through Fabry-Pérot resonant modes in a 430 nm thick InGaAs/GaAsP multiple quantum wells solar cell
Creators
- 1. NextPV, RCAST and CNRS, The University of Tokyo, Meguro-ku, Tokyo 153-8904 (Japan)
- 2. Institute of Research and Development on Photovoltaic Energy (IRDEP–CNRS), Chatou 78401 (France)
- 3. Laboratory for Photonics and Nanostructures (LPN–CNRS), Marcoussis 91460 (France)
- 4. Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo 153-8904 (Japan)
- 5. School of Engineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)
Description
We study light management in a 430 nm-thick GaAs p-i-n single junction solar cell with 10 pairs of InGaAs/GaAsP multiple quantum wells (MQWs). The epitaxial layer transfer on a gold mirror improves light absorption and increases the external quantum efficiency below GaAs bandgap by a factor of four through the excitation of Fabry-Perot resonances. We show a good agreement with optical simulation and achieve around 10% conversion efficiency. We demonstrate numerically that this promising result can be further improved by anti-reflection layers. This study paves the way to very thin MQWs solar cells
Additional details
Identifiers
- DOI
- 10.1063/1.4913469;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 106
- Journal Issue
- 8
- Journal Page Range
- p. 081107-081107.4
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46118540
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ABSORPTION; COMPUTERIZED SIMULATION; ELECTRIC CONTACTS; EPITAXY; EXCITATION; GALLIUM ARSENIDES; GOLD; INDIUM ARSENIDES; LAYERS; MIRRORS; QUANTUM EFFICIENCY; QUANTUM WELLS; REFLECTION; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; VISIBLE RADIATION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; DIRECT ENERGY CONVERTERS; EFFICIENCY; ELECTRICAL EQUIPMENT; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY-LEVEL TRANSITIONS; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; METALS; NANOSTRUCTURES; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; PNICTIDES; RADIATIONS; SIMULATION; SOLAR EQUIPMENT; SORPTION; TRANSITION ELEMENTS
Optional Information
- Notes
- (c) 2015 AIP Publishing LLC