Formation of SiO₂ buffer layer for LiNbO₃ thin films growth

This paper shows the results of study of the effect of SiO₂ buffer layer thickness on the morphological parameters of nanocrystalline LiNbO₃ films formed by pulsed laser deposition. It has been established that with increasing in the thickness of SiO₂ buffer layer from 10 nm to 50 nm, the roughness of LiNbO₃ films decreases from 5.1 nm to 4.4 nm. The minimum value of the grain diameter (118 nm) corresponds to the thickness of the buffer layer equal to 50 nm. The results obtained can be used in the design and manufacture of integrated acousto-optic and piezoelectric devices, as well as sensitive elements of sensors using various effects of surface acoustic waves. (paper)